DISCRETE-MODE LASER DIODES

EP1950 Discrete-Mode High Power Series – Coherent Seed Source

 

The EP1950 Discrete-Mode Series laser diode builds on Eblana Photonics extensive experience in longer wavelength InP processing.

This highly coherent and reliable laser is perfectly designed for integration with Thulium doped fibre amplifiers and lasers for use in a wide range of long wavelength sensing and telecoms applications.

This product is the high power variant of our 2051nm Discrete-Mode range, and utilises a seperately driven Semiconductor Optical Amplifier (SOA) diode chip to boost the output power of the laser diode.

PRODUCT SPECIFICATIONS

KEY POINTS

  • Advanced strained InP MQW design
  • Excellent spectral purity
  • Reliable Tm-doped fibre laser seed
Parameter
Typical Value
Units
Threshold Current 25 mA
Slope Efficiency 0.26 W/A
Output Power 12 mW
Tuning Coefficient 0.003 nm/mA
Side Mode Suppression Ratio 35 dB
Operating Temperature Range -20 to 65 °C

PACKAGE TYPES

14-Pin Butterfly

Fibre-coupled package with TEC, monitor photodiode and optical isolation as standard

DX-1

Simplified, single package for any Eblana laser, with integrated current & TEC control electronics

TO-39 Can

Free-space emitting package with 6-pin connection for easy design integration, and anti-reflection coated window

CONTACT US

Talk to us right now to find out how Eblana Photonics can drive value for you or your team in the field.

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